Crack Software DownloadCGSim v12
CGSim package for analysis and optimization of Cz, LEC, VCz, and Bridgman growth of semiconductor and semitransparent crystalsCGSim can be effectively applied to the following practical problems: Control and optimization of the crystallization front geometry and V/G distribution by adjustment of the hot zone and growth parameters. Increase of the crystallization rate with keeping high crystal quality. Control over stress and defects in the growing crystal. Defect engineering via accurate adjustment of the heat shields. Governing melt convection via crystal/crucible rotation rates, magnetic fields of various strength and orientation. Stabilization of convection in the melt while maintaining reasonable turbulent mixing. Analysis of impurity transport in both the melt and gas. Prediction of oxygen and carbon containing species concentrations in Si...